Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon New Approach to Capacitance Studies of 'DX' CentersDiodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature Modeling of Dopant and Defect Interactions in Si Process Simulators Spectroscopic Study of Magnesium-Related Impurities in Silicon Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism In-Diffusion Concentration Profiles of Dopants in Semiconductors Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors