This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).
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- The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry
- Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides
- Calculating the Properties of Defects in Semiconductors at Finite Temperatures
- Role of Cation Vacancy-Related Defects in Self-Assembling of CdSe Quantum Dots
- Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors
- First Principles Calculations of Hydrogen Aggregation in Silicon
- Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures
- On the Photo-Ionization Cross-Section of DX Centers
- Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy
- Investigation and Identification of Transition Metals in p-Type Boron-Doped Silicon by Non-Invasive Techniques
- Classification of Defects on Semiconductor Wafers Using Priority Rules
- Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
- Mechanism of Formation and Physical Classification of the Grown-In Microdefects in Semiconductor Silicon
- Nitrogen in Silicon
- Modelling of Staebler-Wronski Effect in Hydrogenated Amorphous Silicon under Moderate and Intense Illumination
- Defect Engineering in Impurity-Free Disordered (Al)GaAs for Optoelectronic Devices Application
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Produktdetaljer
ISBN
9783908451044
Publisert
2004-11-01
Utgiver
Trans Tech Publications Ltd; Trans Tech Publications Ltd
Vekt
1100 gr
Høyde
240 mm
Bredde
170 mm
Dybde
27 mm
Aldersnivå
U, UU, UP, P, 05, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
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