Classical to Quantum Transport in Multi-Dimensional Field Effect Transistors
Produktdetaljer
Om bidragsyterne
Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.
Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.
Classical to Quantum Transport in Multi‑Dimensional Field Effect Transistors offers a wide range of topics with attractive images and informative explanations. It begins with an exploration of the fundamentals of field effect transistor (FET) functioning, emphasizing how behavior is governed by classical models. As the semiconductor industry pushes the boundaries of miniaturization and performance, Multi-Dimensional Field Effect Transistors (MuDFETs) and emerging material platforms are redefining the foundations of modern electronics. This book offers a deep and insightful journey through the evolving landscape of advanced FET architectures—from classical conduction models to quantum and ballistic transport regimes. Authored by experts across academia and research institutions, this book offers in-depth discussions on:
• Multi-Dimensional and Junctionless FETs: Design innovations enabling superior control, scaling, and performance.
• 2D Materials & Transition Metal Dichalcogenides (TMDCs): Harnessing atomically thin semiconductors for next‑generation device engineering.
• Nanosheet Transistors: Unlocking new dimensions in charge transport and quantum confinement.
• Charge transport mechanisms from classical, semiclassical to ballistic regimes in nanosheet and nanowire FETs.
• Tunnel Field Effect Transistor (TFET)-Based Biosensors: Cutting-edge developments in label‑free, ultra-sensitive detection for healthcare and environmental monitoring.
• Integration of FET platforms in nonlinear and quantum photonics using silicon nitride waveguides.
Whether you’re exploring the quantum limits of device physics or developing real-world sensing solutions, this collection bridges theory and application in one compelling volume. With contributions from leading researchers and technologists, this book serves as a vital reference for academics, graduate students, and professionals working in nanoelectronics, semiconductor devices, biosensors, and photonic field.
Chapter 1 Introduction to Multi-Dimensional Field Effect Transistors (MuDFETs)
Mamataj Khatuna and Ekramul Kabir
Chapter 2 Introduction to Multi-Dimensional Field Effect Transistors (FETs)
Piyali Saha
Chapter 3 2D Material-Based Field Effect Transistors (FETs)
Piyali Saha, Soumya Sen, Prabhat Singh, and Ashish Raman
Chapter 4 Emerging Transition Metal Dichalcogenides (TMDCs) in Semiconductor Design: A Path to Next-Generation Electronics
Malvika, Ashutosh Srivastava, Jagritee Talukdar, Rajan Singh, Prabhat Singh, and Jami Venkata Suman
Chapter 5 From Classical to Quantum: Ballistic Transport in Nanosheet FETs
E. Rajalakshmi, N. B.Balamurugan, M. Hemalatha and M. Suguna
Chapter 6 Classical to Semiclassical Transport in Field Effect Transistors
Sharmistha Shee Kanrar, Shib Sankar Das, and Subir Kumar Sarkar
Chapter 7 Scaling Capability Analysis of Junctionless Multi-Gate FETs
R. Ouchen, T. Berghout, F. Djeffal, and H. Ferhati
Chapter 8 Nanosheet Transistors: A New Dimension in Charge Transport
Parul Devi
Chapter 9 Advanced Electrostatics in Nanosheet Transistors for Enhanced Device Scaling
Vratika Verma, Teena Saini, Sakshi Saini, and Jagram Meena
Chapter 10 The Charge Transport of the Breast Cancer Cells on Metal Strip-Loaded Extended Source-TFET Biosensor
Madhulika Verma and Sachin Agrawal
Chapter 11 Exploring Tunnel Field Effect Transistors (TFETs) as Label-Free Biosensors: Bridging Advances in Biosensing Technology Basudha Dewan and Kamal Kishor Choure
Chapter 12 Field Effect Transistors in Gas Sensing: Advances in Detection and Analysis of Diverse Gases
Ankit Kumar Singh, Sanjeev Rai, and Nirmal Roy
Chapter 13 High-Performance Silicon Nitride Waveguides: A Platform for Nonlinear and Quantum Photonics
Chandani Dubey, Prabhat Singh, Priya Kaushal, Dilip Singh, Malvika, and Ashutosh Srivastava
Produktdetaljer
Om bidragsyterne
Naveen Kumar received his PhD from the Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, India. Dr. Kumar is a postdoctoral research associate in DMG in the Electronic and Nanoscale Engineering Division, University of Glasgow. His research revolves around different semiconductor devices including ultra-scaled FETs, solar cells, photodiodes, HEMT, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Prateek Kumar received his PhD from the University of Delhi, India. Dr. Kumar is a postdoctoral research associate and the Chair for Electronic Devices and Integrated Circuits, Technical University of Dresden, Germany. His research includes next-generation SiGe HBTs, feedback FETs, and graphene-based transistors with special emphasis on quantum and semi-classical transport. His main areas of research interest include semiconductor device physics, MEMS/NEMS, and spintronics.
Ankit Dixit received his Ph.D. in Electronics and Communication Engineering from the Indian Institute of Information Technology, Design, and Manufacturing, Jabalpur, India. He carried out his research on III-V materials for the application of low-power devices and biosensor applications. Dr. Dixit is working as a research associate in the DeepNano Group, University of Glasgow, Scotland, where he is responsible for conducting research on nanoelectronics device simulations and variability analysis for novel devices.
Prabhat Singh received his PhD from the National Institute of Technology, Hamirpur, Himachal Pradesh, India. Dr. Singh is a postdoctoral research associate in the School of Electrical and Computer Science at IIT Bhubaneswar, Odisha. His research revolves around different semiconductor devices including cryogenic CMOS, ultra-scaled FETs, solar cells, quantum dots, and their prospective applications. His main areas of research interest include semiconductor device physics, solid-state devices, analog complementary metal oxide semiconductor (CMOS) integrated circuits, and nanoscale device design and simulation.