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On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits

Cui Qiang Liou Juin J. Hajjar Jean-Jacques Se alle
Heftet / 2016 / Engelsk

Produktdetaljer

ISBN
9783319358246
Publisert
2016-10-06
Utgiver
Vendor
Springer International Publishing AG
Høyde
235 mm
Bredde
155 mm
Aldersnivå
Professional/practitioner, P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet

Forfatter
Cui Qiang
Liou Juin J.
Hajjar Jean-Jacques
Salcedo Javier
Zhou Yuanzhong
Srivatsan Parthasarathy

Om bidragsyterne

Dr. Qiang Cui received his B.S, M.S and PhD in Electrical Engineering in 2006, 2008, 2013 respectively. His research work includes Radio Frequency Integrated Circuits (RFIC) Design and Reliability. His research work has been referenced in publications and also applied to industry application. He is now a senior RF IC design engineer in RF Micro Devices (RFMD).

Juin J. Liou received the B.S. (honors), M.S., and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively.  He is now with the School of EECS at the University of Central Florida (UCF). His current research interests are electrostatic discharge (ESD) protection design, modeling, and simulation.
 Dr. Liou has been awarded 8 U.S. patents, and has published 10 books, 2 book chapter, more than 270 journal papers, and more than 220 papers in international and national conference proceedings. Dr. Liou was awarded the UCF Pegasus Distinguished Professor in 2009 – the highest honor bestowed to a faculty member at UCF, UCF Distinguished Researcher Award in 1992, 1998, 2002, and 2009, and IEEE Joseph M. Biedenbach Outstanding Engineering Educator Award in 2004. His other honors are Fellow of IEEE, Fellow of IET, Fang Chia Chair Professor of Fang Chia University, Taiwan, and Chang Jiang Endowed Professor of Ministry of Education, China – the highest honorary professorship in China.

Dr. Javier A. Salcedo is a Technology Development Engineer at Analog Devices (ADI), Wilmington, Massachusetts. Dr. Salcedo’s technical publications and inventions in electron devices technology are regularly referenced in the literature and have been adopted in the semiconductor industry to enable new IC applications for consumer electronics, communication infrastructure, healthcare systems, automotive electronics and industrial control applications. Dr. Salcedo is a recipient of the Institute of Electrical and Electronics Engineers (IEEE)Electron Devices Society (EDS) Ph.D. Fellowship, member of the American Association for the Advancement of Science (AAAS), member of the Electrostatic Discharge Association (ESDA) and a Senior Member of the IEEE.

On-Chip Electro-Static Discharge (ESD) Protection for Radio-Frequency Integrated Circuits

Cui Qiang Liou Juin J. Hajjar Jean-Jacques Se alle
Heftet / 2016 / Engelsk
Cui Qiang Liou Juin J. Hajjar Jean-Jacques Se alle
Heftet / 2016 / Engelsk
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This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.
Les mer
This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.
Les mer
Basics in ESD Protection of Radio Frequency Integrated Circuits.- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process.- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process.- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process.- Conclusion.
Les mer
This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies;Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS);Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance.
Les mer
Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS) Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance Includes supplementary material: sn.pub/extras
Les mer

Relaterte produkter

This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.
Les mer
This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.
Les mer
Basics in ESD Protection of Radio Frequency Integrated Circuits.- On-Chip Protection Solution for Radio Frequency Integrated Circuits in Standard CMOS Process.- Design of SiGe SCR devices for Radio Frequency Integrated Circuits in SiGe BiCMOS Process.- On-Chip Radio Frequency ESD Protection Solution in GaAs pHEMT Process.- Conclusion.
Les mer
This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies;Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS);Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance.
Les mer
Describes in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies Enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS) Includes realistic case studies of ESD protection for RFICs that resulted in significantly increased ESD safety level, while maximizing RF performance Includes supplementary material: sn.pub/extras
Les mer

Produktdetaljer

ISBN
9783319358246
Publisert
2016-10-06
Utgiver
Vendor
Springer International Publishing AG
Høyde
235 mm
Bredde
155 mm
Aldersnivå
Professional/practitioner, P, 06
Språk
Product language
Engelsk
Format
Product format
Heftet

Forfatter
Cui Qiang
Liou Juin J.
Hajjar Jean-Jacques
Salcedo Javier
Zhou Yuanzhong
Srivatsan Parthasarathy

Om bidragsyterne

Dr. Qiang Cui received his B.S, M.S and PhD in Electrical Engineering in 2006, 2008, 2013 respectively. His research work includes Radio Frequency Integrated Circuits (RFIC) Design and Reliability. His research work has been referenced in publications and also applied to industry application. He is now a senior RF IC design engineer in RF Micro Devices (RFMD).

Juin J. Liou received the B.S. (honors), M.S., and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively.  He is now with the School of EECS at the University of Central Florida (UCF). His current research interests are electrostatic discharge (ESD) protection design, modeling, and simulation.
 Dr. Liou has been awarded 8 U.S. patents, and has published 10 books, 2 book chapter, more than 270 journal papers, and more than 220 papers in international and national conference proceedings. Dr. Liou was awarded the UCF Pegasus Distinguished Professor in 2009 – the highest honor bestowed to a faculty member at UCF, UCF Distinguished Researcher Award in 1992, 1998, 2002, and 2009, and IEEE Joseph M. Biedenbach Outstanding Engineering Educator Award in 2004. His other honors are Fellow of IEEE, Fellow of IET, Fang Chia Chair Professor of Fang Chia University, Taiwan, and Chang Jiang Endowed Professor of Ministry of Education, China – the highest honorary professorship in China.

Dr. Javier A. Salcedo is a Technology Development Engineer at Analog Devices (ADI), Wilmington, Massachusetts. Dr. Salcedo’s technical publications and inventions in electron devices technology are regularly referenced in the literature and have been adopted in the semiconductor industry to enable new IC applications for consumer electronics, communication infrastructure, healthcare systems, automotive electronics and industrial control applications. Dr. Salcedo is a recipient of the Institute of Electrical and Electronics Engineers (IEEE)Electron Devices Society (EDS) Ph.D. Fellowship, member of the American Association for the Advancement of Science (AAAS), member of the Electrostatic Discharge Association (ESDA) and a Senior Member of the IEEE.

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