Although existing nanometer CMOS technology is expected to remain dominant for the next decade, new non-classical devices are being developed as the potential replacements of silicon CMOS, in order to meet the ever-present demand for faster, smaller, more efficient integrate circuits.
Many new devices are based on novel emerging materials such as one-dimensional carbon nanotubes and two-dimensional graphene, non-graphene two-dimensional materials, and transition metal dichalcogenides. Such devices use on/off operations based on quantum mechanical current transport, and so their design and fabrication require an understanding of the electronic structures of materials and technologies. Moreover, new electronic design automation (EDA) tools and techniques need to be developed based on integrating devices from emerging novel material-based technologies.
The aim of this book is to explore the materials and design requirements of these emerging integrated circuit technologies, and to outline their prospective applications. It will be useful for academics and research scientists interested in future directions and developments in design, materials and applications of novel integrated circuit technologies, and for research and development professionals working at the cutting edge of integrated circuit development.
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Novel devices with the potential to provide alternatives to existing nanometer CMOS technology are the subject of research in the fields of electronic materials and electronic design automation. This book explores the materials and design requirements of emerging integrated circuit technologies, and outlines their prospective applications.
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Chapter 1: Graphene and other than graphene materials technology and beyondChapter 2: Emerging graphene-compatible biomaterialsChapter 3: Single electron devices: concept to realizationChapter 4: Application of density functional theory (DFT) for emerging materials and interconnectsChapter 5: Memristor devices and memristor-based circuitsChapter 6: Organic-inorganic heterojunctions for optoelectronic applicationsChapter 7: Emerging high-κ dielectrics for nanometer CMOS technologies and memory devicesChapter 8: Technology and modeling of DNTT organic thin-film transistorsChapter 9: Doping-free tunnelling transistors - technology and modellingChapter 10: Tunnel junctions to tunnel field-effect transistors - technologies, current transport models, and integrationChapter 11: Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integrationChapter 12: Molybdenum disulfide-boron nitride junctionless tunnel effect transistor
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Produktdetaljer
ISBN
9781785616648
Publisert
2020-06-15
Utgiver
Vendor
Institution of Engineering and Technology
Høyde
234 mm
Bredde
156 mm
Aldersnivå
U, P, 05, 06
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
320