This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.The book: Covers novel semiconductor devices with submicron dimensions Discusses comprehensive device optimization techniques Examines conceptualization and modeling of semiconductor devices Covers circuit and sensor-based application of the novel devices Discusses novel materials for next-generation devices This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.
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This text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. It covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail.
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Chapter 1 Fundamental Phenomena in Nanoscale Semiconductor DevicesZeinab Ramezani and Arash AhmadivandChapter 2 Recent Advancements in Growth and Stability of Phosphorene:Prospects for High-Performance DevicesSushil Kumar Pandey, Vivek Garg, Nezhueyotl Izquierdo, and Amitesh KumarChapter 3 Study of Transition Metal Dichalcogenides in JunctionlessTransistors and Effect of Variation in Dielectric OxidePrateek Kumar, Maneesha Gupta, Kunwar Singh, and Ashok Kumar GuptaChapter 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR InterconnectsAfreen Khursheed and Kavita KhareChapter 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene FilterKatyayani Bhardwaj, Aryan, and R.K. YadavChapter 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in WaterAvik Sett, Monojit Mondal, Santanab Majumder, and Tarun Kanti BhattacharyyaChapter 7 Vertical Tunnel FET Having Dual MOSCAP GeometryVandana Devi Wangkheirakpam, Brinda Bhowmick, and Puspa Devi PukhrambamChapter 8 Leakage Current and Capacitance Reduction in CMOS TechnologyAjay Somkuwar and Laxmi SinghChapter 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog PerformanceNavaneet Kumar Singh, Rajib Kar, and Durbadal MandalChapter 10 Solving Schrodinger’s Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement EffectsAmit KumarChapter 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD ToolRemya Jayachandran, Rama S. Komaragiri, and K. J. DhanarajChapter 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS DevicesChhaya Verma and Jeetendra SinghChapter 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT ApplicationsSuruchi Sharma, Rikmantra Basu, and Baljit KaurChapter 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for SupercapacitorsMonojit Mondal, Avik Sett, Dipak Kumar Goswami, and Tarun Kanti BhattacharyyaChapter 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power ApplicationAshok Kumar Gupta, Ashish Raman, Naveen Kumar, Deep Shekhar, and Prateek KumarChapter 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFETSagarika Choudhury, Krishna Lal Baishnab, Brinda Bhowmick, and Koushik GuhaChapter 17 Graphene Nanoribbon Devices: Advances in Fabrication and ApplicationsJuan M. Marmolejo-Tejada, Jaime Velasco-Medina, and Andres Jaramillo-BoteroChapter 18 Design and Analysis of Various Neural Preamplifier CircuitsSwagata Devi, Koushik Guha, and Krishna Lal BaishnabChapter 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback TransistorPrateek Kumar, Maneesha Gupta, Kunwar Singh, Ashok Kumar Gupta, and Naveen KumarChapter 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing ApplicationsAman Mahajan and Manreet Kaur SohalChapter 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency ApplicationsRamesh Rathinam, Adhithan Pon, and Arkaprava BhattacharyyaChapter 22 Analytical Modeling of Reconfigurable TransistorsRanjith Rajan, Suja Krishnan Jagada, and Rama S. KomaragiriChapter 23 Flexi-Grid Technology: A Necessity for Spectral Resource UtilizationDivya Sharma, Shivam Singh, Anurag Upadhyay, and Sofyan A. Taya
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Produktdetaljer

ISBN
9780367648107
Publisert
2024-10-04
Utgiver
Vendor
CRC Press
Vekt
757 gr
Høyde
254 mm
Bredde
178 mm
Aldersnivå
U, P, 05, 06
Språk
Product language
Engelsk
Format
Product format
Heftet
Antall sider
392

Om bidragsyterne

Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects.

Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc.

Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.