With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics.The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices)Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells)Compound semiconductor devices and technologyThis reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
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Section I: Semiconductor MaterialsElectrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit ModelsMonolithic Integration of Carbon Nanotubes and CMOSFacile, Scalable, and Ambient—Electrochemical Route for Titania Memristor FabricationSpin Transport in Organic Semiconductors: A Brief Overview of the First Eight YearsSection II: Silicon Devices and TechnologySiGe BiCMOS Technology and DevicesUltimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power ParadigmDevelopment of 3D Chip Integration TechnologyEmbedded Spin–Transfer–Torque MRAMNonvolatile Memory Device: Resistive Random Access MemoryDRAM TechnologyMonocrystalline Silicon Solar Cell Optimization and ModelingRadiation Effects on Silicon DevicesSection III: Compound Semiconductor Devices and TechnologyGaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth TechnologyGaN HEMTs Technology and ApplicationsSurface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide-Semiconductor High-Electron Mobility TransistorsGaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature DevicesGaAs HBT and Power Amplifier Design for Handset TerminalsResonant Tunneling and Negative Differential Resistance in III-NitridesNew Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors
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Produktdetaljer

ISBN
9781439848357
Publisert
2011-10-24
Utgiver
Vendor
CRC Press Inc
Vekt
952 gr
Høyde
234 mm
Bredde
156 mm
AldersnivĂĽ
U, G, 05, 01
SprĂĽk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
600

Redaktør

Om bidragsyterne

Krzysztof Iniewski is managing R&D developments at Redlen Technologies, Inc., a start-up company in British Columbia, and is also an Executive Director of CMOS Emerging Teclmologies, Inc.