This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys.
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Summarizes known diffusion and defect properties of the end-members and of the intermediate alloys. This title includes data on the diffusion of Ag, Al, As, Au, Bi, Br, C, Ca, Cd, Cl, Co, Cr, Cu, Fe, Ga, H, Hg, I, In, K, Li, Mn, Na, Ni, O, P, S, Sb, Se, Sn, Te and Zn in various compositions, as well as the details of defect phenomena.
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Produktdetaljer

ISBN
9783908451440
Publisert
2007-09-05
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
500 gr
Høyde
240 mm
Bredde
170 mm
Dybde
11 mm
Aldersnivå
P, UP, 06, 05
Språk
Product language
Engelsk
Format
Product format
Heftet

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