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Advanced MOS Devices and their Circuit Applications

Beohar, Ankur Mathew, Ribu Upadhyay, Abhishek Kumar Se alle
Innbundet / 2024 / Engelsk

Produktdetaljer

ISBN
9781032392851
Publisert
2024-01-08
Utgiver
Vendor
CRC Press
Vekt
453 gr
Høyde
234 mm
Bredde
156 mm
Aldersnivå
U, 05
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
146

Redaktør
Beohar, Ankur
Mathew, Ribu
Upadhyay, Abhishek Kumar
Vishvakarma, Santosh Kumar

Om bidragsyterne

Dr. Ankur Beohar (Senior member IEEE) obtaineda PhD degree in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2018. After getting his PhD, he worked as a postdoctoral fellow in the Device Modeling Group, IISER, Bhopal, and then as a research scientist for one year under awarded Scientist Pool scheme of Council of Scientific and Industrial Research (CSIR), New Delhi. Currently, he is working as an assistant professor at Vellore Institute of Technology (VIT) Bhopal. He is an IEEE Senior Member and a Secretary of IEEE, Circuit and System Society, MP section, India. He completed his M.Tech degree in VLSI and Embedded System Design from MANIT Bhopal and B.Tech (Electronics) from RGPV University Bhopal in 2010 and 2005. He has a research and academic work experience of more than 13 years. He has a renowned research experience in the field of low-power device circuit design Memory Circuit Design and Reliability. His current research is related to new-generation innovative devices, such as optimization of gate all around (GAA)-Tunnel field effect transistor (TFET) with spacer engineering and its circuit applications. Currently, he is working in the research project sanctioned by the Science and Engineering Research Board (SERB) under the Teachers Associateship Research Excellence (TARE) scheme. Dr. Beohar has published more than 35 research publications in various peer- reviewed international conferences and SCI journals. Along with this, he has reviewed more than 100+ journal and conferences articles.

Dr. Abhishek Kumar Upadhyay obtained a PhD in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2019. After getting his PhD, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and then as a staff scientist in the Chair of Electronics Devices and Integrated Circuits at Technische Universität Dresden, Germany, for two years. Currently he is working as an R&D rngineer in X-FAB GmbH, Dresden, Germany. He is the author of several research articles.

Dr. Ribu Mathew holds a doctorate degree in electronics engineering from Vellore Institute of Technology (VIT) University, Chennai Campus. A gold medallist in his post graduation, Dr. Mathew completed his MTech in VLSI design and BTech in electronics and communication engineering. In his doctoral research work, he has contributed in the field of design, modelling, and fabrication of NEMS technology piezoresistive readout-based nano cantilever sensors for chemical and biological sensing applications. In addition to the compu- tational knowledge in industrial standard NEMS devices, he has gained experience in NEMS/IC layout tools and clean room fabrication technologies from CeNSE, IISc Bangalore. He has published several research papers in reputed international journals and conferences. His research areas include the design, modelling, and fabrication of MEMS/NEMS technology- based sensor and actuator systems, especially micro/nano cantilever and diaphragm-based devices, bio-MEMS, analog/RF IC design, SoC design, and device modeling. Currently he is working as an Associate Professor, MAHE, MANIPAL University, Karnataka.

Professor Santosh Kumar Vishvakarma received the BSc in electronics from the University of Gorakhpur, Gorakhpur, in 1999, the MSc in electronics from Devi Ahilya Vishwavidyalaya, Indore, India, in 2001, the MTech in microelectronics from Punjab University, Chandigarh, India, in 2003, and the PhD in microelectronics and VLSI from the Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, India, in 2010. From 2009 to 2010, he was with University Graduate Center, Kjeller, Norway, as a postdoctoral fellow under European Union COMON project. Professor Vishvakarma is with the Department of Electrical Engineering, Indian Institute of Technology Indore, MP, India as a professor at IIT Indore. He is leading the Nanoscale Devices and VLSI Circuit and System Design (NSDCS) Laboratory since 2010. He is engaged with teaching and research in the areas of:

  • Energy-efficient and reliable SRAM memory design
  • Enhancing performance and configurable architecture for DNN accelerators
  • SRAM based in-memory computing architecture for edge AI
  • Reliable, secure design for IoT applications
  • Design for reliability

He has supervised a total of seventeen PhD students, and currently six students are working with his group. He has authored or co-authored more than 175 research papers in peer-reviewed international journals and conferences. He was also granted 04 Indian Patent from IIT Indore and has thirteen sponsored research projects. He is a senior member of IEEE, professional member of VLSI Society of India, associate member of Institute of Nanotechnology, and life member of Indian Microelectronics Society (IMS), India.

Advanced MOS Devices and their Circuit Applications

Beohar, Ankur Mathew, Ribu Upadhyay, Abhishek Kumar Se alle
Innbundet / 2024 / Engelsk
Beohar, Ankur Mathew, Ribu Upadhyay, Abhishek Kumar Se alle
Innbundet / 2024 / Engelsk
Nettpris:
1.227,-
Levering 7-20 dager
Sjekk lagerstatus i butikk
This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
Les mer
The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.
Les mer
Chapter 1An Overview of DC/RF Performance of Nanosheet Field Effect Transistor for Future Low Power ApplicationsArun A V, Sajeesh M, Jobymol Jacob, J AjayanChapter 2Device Design and Analysis of 3D SCwRD Cylindrical (Cyl) Gate-All-Around (GAA) Tunnel FET using Split-Channel and spacer EngineeringAnkur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar VishvakarmaChapter 3Investigation of High-K Dielectrics for Single and Multi-Gate FETsSresta Valasa, Shubham Tayal, Laxman Raju ThoutamChapter 4Measurement of Back Gate Biasing For Ultra Low Power Subthreshold Logic in FinFET DeviceAjay Kumar Dadoria, Uday Panwar, Narendra Kumar GargChapter 5Compact Analytical Model for Graphene Field Effect Transistor: Drift-Diffusion ApproacAbhishek Kumar Upadhyay1, Siromani Balmukund Rahi, BillelChapter 6Design of CNTFET-Based Ternary Logic Flip-Flop and Counter Circuits using Unary OperatorsTrapti SharmaChapter 7NOVEL RADIATION HARDENED LOW POWER 12 TRANSISTORS SRAM CELL FOR AEROSPACE APPLICATIONVancha sharath reddy, Arjun singh yadav, Soumya senguptaChapter 8Nanoscale CMOS Static Random Access Memory (SRAM) Design: Trends and ChallengesSunanda Ambulkar, Jeetendra Kumar MishraChapter 9Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuitsUday Panwar, Ajay Kumar DadoriaChapter 10A Novel Approach for High Speed and low Power by using Nano-VLSI InterconnectsNarendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria
Les mer

Relaterte produkter

This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
Les mer
The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.
Les mer
Chapter 1An Overview of DC/RF Performance of Nanosheet Field Effect Transistor for Future Low Power ApplicationsArun A V, Sajeesh M, Jobymol Jacob, J AjayanChapter 2Device Design and Analysis of 3D SCwRD Cylindrical (Cyl) Gate-All-Around (GAA) Tunnel FET using Split-Channel and spacer EngineeringAnkur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar VishvakarmaChapter 3Investigation of High-K Dielectrics for Single and Multi-Gate FETsSresta Valasa, Shubham Tayal, Laxman Raju ThoutamChapter 4Measurement of Back Gate Biasing For Ultra Low Power Subthreshold Logic in FinFET DeviceAjay Kumar Dadoria, Uday Panwar, Narendra Kumar GargChapter 5Compact Analytical Model for Graphene Field Effect Transistor: Drift-Diffusion ApproacAbhishek Kumar Upadhyay1, Siromani Balmukund Rahi, BillelChapter 6Design of CNTFET-Based Ternary Logic Flip-Flop and Counter Circuits using Unary OperatorsTrapti SharmaChapter 7NOVEL RADIATION HARDENED LOW POWER 12 TRANSISTORS SRAM CELL FOR AEROSPACE APPLICATIONVancha sharath reddy, Arjun singh yadav, Soumya senguptaChapter 8Nanoscale CMOS Static Random Access Memory (SRAM) Design: Trends and ChallengesSunanda Ambulkar, Jeetendra Kumar MishraChapter 9Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuitsUday Panwar, Ajay Kumar DadoriaChapter 10A Novel Approach for High Speed and low Power by using Nano-VLSI InterconnectsNarendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria
Les mer

Produktdetaljer

ISBN
9781032392851
Publisert
2024-01-08
Utgiver
Vendor
CRC Press
Vekt
453 gr
Høyde
234 mm
Bredde
156 mm
Aldersnivå
U, 05
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
146

Redaktør
Beohar, Ankur
Mathew, Ribu
Upadhyay, Abhishek Kumar
Vishvakarma, Santosh Kumar

Om bidragsyterne

Dr. Ankur Beohar (Senior member IEEE) obtaineda PhD degree in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2018. After getting his PhD, he worked as a postdoctoral fellow in the Device Modeling Group, IISER, Bhopal, and then as a research scientist for one year under awarded Scientist Pool scheme of Council of Scientific and Industrial Research (CSIR), New Delhi. Currently, he is working as an assistant professor at Vellore Institute of Technology (VIT) Bhopal. He is an IEEE Senior Member and a Secretary of IEEE, Circuit and System Society, MP section, India. He completed his M.Tech degree in VLSI and Embedded System Design from MANIT Bhopal and B.Tech (Electronics) from RGPV University Bhopal in 2010 and 2005. He has a research and academic work experience of more than 13 years. He has a renowned research experience in the field of low-power device circuit design Memory Circuit Design and Reliability. His current research is related to new-generation innovative devices, such as optimization of gate all around (GAA)-Tunnel field effect transistor (TFET) with spacer engineering and its circuit applications. Currently, he is working in the research project sanctioned by the Science and Engineering Research Board (SERB) under the Teachers Associateship Research Excellence (TARE) scheme. Dr. Beohar has published more than 35 research publications in various peer- reviewed international conferences and SCI journals. Along with this, he has reviewed more than 100+ journal and conferences articles.

Dr. Abhishek Kumar Upadhyay obtained a PhD in electrical engineering from the Indian Institute of Technology (IIT), Indore, MP, India, in 2019. After getting his PhD, he worked for one year as a postdoctoral fellow in the Model Group, Material to System Integration Laboratory, University of Bordeaux, France, and then as a staff scientist in the Chair of Electronics Devices and Integrated Circuits at Technische Universität Dresden, Germany, for two years. Currently he is working as an R&D rngineer in X-FAB GmbH, Dresden, Germany. He is the author of several research articles.

Dr. Ribu Mathew holds a doctorate degree in electronics engineering from Vellore Institute of Technology (VIT) University, Chennai Campus. A gold medallist in his post graduation, Dr. Mathew completed his MTech in VLSI design and BTech in electronics and communication engineering. In his doctoral research work, he has contributed in the field of design, modelling, and fabrication of NEMS technology piezoresistive readout-based nano cantilever sensors for chemical and biological sensing applications. In addition to the compu- tational knowledge in industrial standard NEMS devices, he has gained experience in NEMS/IC layout tools and clean room fabrication technologies from CeNSE, IISc Bangalore. He has published several research papers in reputed international journals and conferences. His research areas include the design, modelling, and fabrication of MEMS/NEMS technology- based sensor and actuator systems, especially micro/nano cantilever and diaphragm-based devices, bio-MEMS, analog/RF IC design, SoC design, and device modeling. Currently he is working as an Associate Professor, MAHE, MANIPAL University, Karnataka.

Professor Santosh Kumar Vishvakarma received the BSc in electronics from the University of Gorakhpur, Gorakhpur, in 1999, the MSc in electronics from Devi Ahilya Vishwavidyalaya, Indore, India, in 2001, the MTech in microelectronics from Punjab University, Chandigarh, India, in 2003, and the PhD in microelectronics and VLSI from the Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, India, in 2010. From 2009 to 2010, he was with University Graduate Center, Kjeller, Norway, as a postdoctoral fellow under European Union COMON project. Professor Vishvakarma is with the Department of Electrical Engineering, Indian Institute of Technology Indore, MP, India as a professor at IIT Indore. He is leading the Nanoscale Devices and VLSI Circuit and System Design (NSDCS) Laboratory since 2010. He is engaged with teaching and research in the areas of:

  • Energy-efficient and reliable SRAM memory design
  • Enhancing performance and configurable architecture for DNN accelerators
  • SRAM based in-memory computing architecture for edge AI
  • Reliable, secure design for IoT applications
  • Design for reliability

He has supervised a total of seventeen PhD students, and currently six students are working with his group. He has authored or co-authored more than 175 research papers in peer-reviewed international journals and conferences. He was also granted 04 Indian Patent from IIT Indore and has thirteen sponsored research projects. He is a senior member of IEEE, professional member of VLSI Society of India, associate member of Institute of Nanotechnology, and life member of Indian Microelectronics Society (IMS), India.

Relaterte produkter