PrefaceFree-Standing 3C-SiC P-Type Doping by Al Ion ImplantationTEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial LayerEvolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC SystemsLow Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser AnnealingImproving HfO2 Thick Films for SiC Power Devices by Si, Y and La DopingDopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon CarbideTransient-Enhanced Diffusion of Implanted Aluminum in 4H-SiCCalibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiCPrediction of Contact Resistance of 4H–SiC by Machine Learning Using Optical Microscope Images after Laser DopingThe Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiCNi/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser AnnealingLift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiCPlasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside MetallizationEffect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiCNickel Ohmic Contacts Formed on 4H-SiC by UV Laser AnnealingElectrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin WafersEmpirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal BudgetLow-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density OptimizationLong Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiCMetal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTsPerformance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETsHydrogen Etching Process of 4H-SiC (0001) in Limited RegionsComparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFETDemonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power DevicesIncreasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC SurfaceDemonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET ApplicationsHigh Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP SlurryAddition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC CrystalIncreasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard MaskA Comparison between Different Post Grinding Processes on 4H-SiC WafersInfluence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiCHigh-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)