The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.
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10 Years of Research
Enhanced Diffusion in Nonstoichiometric AlAs/GaAs HeterostructuresPoint Defects and Interdiffusion at GaAs HeterojunctionsThe Investigation of Structures, Defects and Electrical Properties of GaAs Films Implanted with Arsenic IonsDiffusion of Dopants and Impurities in GaN and Related MaterialsDonor-Related Deep Levels in in1-xGaxAsyP1-yAnnealing-Related Phenomena in Bulk Semi-Insulating Indium PhosphideDiffusion and Defects in Yb-Impanted InPThe Annealing Behavior of Irradiated Diffused Junction and Epitaxial InP Solar CellsHydrogen as a Deep Imputity in Semiconductors and Its Interaction with Deep Centers in III-V CompoundsPropagation of Dry Etch-Induced Damage in III-V SemiconductorsHydrogen Diffusion in III-V Semiconductors: Application to the Fabrication and Optimization of Photonic DevicesInterplay between Interface Dislocations and Surface Kinetic: A Contribution to the Roughness of Strained Epitaxial Layers
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Produktdetaljer
ISBN
9783908450320
Publisert
1998-03-30
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
1200 gr
Høyde
240 mm
Bredde
170 mm
Dybde
26 mm
Aldersnivå
UP, P, XV, 05, 06, 01
Språk
Product language
Engelsk
Format
Product format
Heftet
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