Produktdetaljer
ISBN
9783908450542
Publisert
2000-08-26
Utgave
3. utgave
Utgiver
Trans Tech Publications Ltd; Trans Tech Publications Ltd
Vekt
1100 gr
Høyde
240 mm
Bredde
170 mm
Dybde
28 mm
Aldersnivå
UP, P, XV, 05, 06, 01
Språk
Product language
Engelsk
Format
Product format
Heftet
Redaktør
The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.
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<p>An Annual Retrospective III</p>
- Recent Advances in Defect Characterization in 6H-SiC Using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
- Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon
- Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
- Diffusion Processes in Strained Silicon Germanium Island Structures
- Damage in III-V Semiconductors from very Low-Energy Process Plasmas
- Influence of In-Doping on the Crystalline Quality of GaAs Epilayers on Si Substrates
- Point Defects in III-V Compound Semiconductors
- On the Role of Interdiffusion during the Growth of Ge on Si(001) and Si(111)
- Point Defects and their Diffusion in Mercury Cadmium Telluride: Investigation Based upon High-Resolution X-Ray Diffraction
- Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching
- Defects and Morphologies in In0.8Ga0.2As/InAlAs/InP(001) for High Electron-Mobility Transistors
- Diffusion of Zinc in InP, InAsP and InGaAs by the Metal-Organic Vapor-Phase Diffusion Technique
- Effect of Implant Temperature on Extended Defects Craeted by Ion Implantation in Silicon
- Diffusion and Electrical Properties of Nickel in Silicon
- XPEEM Study of Liquid Au-Si Droplets on Si(111) near to the Eutectic Point
- Effect of Surface Proximity upon Point Defects in Silicon
- Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion
- Study of Diffusion and Defects by Medium-Energy Coaxial Impact-Collision Ion Scattering Spectroscopy
- Transmission Electron Microscopic Study of Intersecting Stacking Faults in ZnSe/GaAs(001) Epilayers and (SiGe)/Si(001) Multilayers
- Analytical In-Diffusion Profiles of Dopants in Semiconductors
Les mer
Produktdetaljer
ISBN
9783908450542
Publisert
2000-08-26
Utgave
3. utgave
Utgiver
Trans Tech Publications Ltd; Trans Tech Publications Ltd
Vekt
1100 gr
Høyde
240 mm
Bredde
170 mm
Dybde
28 mm
Aldersnivå
UP, P, XV, 05, 06, 01
Språk
Product language
Engelsk
Format
Product format
Heftet
Redaktør