This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT.
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A 10-Year Retrospective
Diffusion in II-VI Semiconductors, Ternary System: Hg1-xCdxTeDsilocations in MBE-Grown ZnSe/GaAs(001) Epitaxial LayersInterdiffusion of Mn and Mg Ions in CdTe-Based Quantum Wells, Studied by Spin TracingTEM Study of Dislocations in ZnTe/GaAs Heterostructure Grown by Hot-Wall EpitaxyTheoretical Description of the Diffusion of Atomic Probes in the Core of the Crystallite Conjugation Region*, and in the Adjacent LatticeAn Experimental Study of the Temperature Dependence of the Population of States Associated with Substitutional 57Co Probes in the Core of Crystallite Conjugation Regions and in the Adjacent Lattice Sites of Polycrystalline Tungsten
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Produktdetaljer

ISBN
9783908450481
Publisert
1999-08-25
Utgiver
Vendor
Trans Tech Publications Ltd
Vekt
880 gr
Høyde
240 mm
Bredde
170 mm
Dybde
19 mm
Aldersnivå
UU, UP, P, 05, 06
Språk
Product language
Engelsk
Format
Product format
Heftet

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